Synthesis,Characterization, Thermal Property of Si(c‐C5H9NH)4 and Its Potential as CVD Precursor for SiC Film |
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| Authors: | Liyong Du Wenxiang Chu Hongyan Miao Dawei Wang Chongying Xu Yuqiang Ding |
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| Affiliation: | 1. The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, 1800 Lihu Avenue, Wuxi, Jiangsu Province, P. R. China;2. Jiangsu Nata Opto‐Electronic Material Co. Ltd., 7F One Lakepoint, No. 9 Cuiwei Street, Suzhou Industrial Park, Jiangsu Province, P. R. China |
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| Abstract: | Silicon(IV) amide Si(c‐C5H9NH)4 ( 1 ), was synthesized and characterized by 1H, 13C, and 29Si NMR spectroscopy, EI‐MS, elemental analysis, and X‐ray diffraction. Its thermal stability and volatility were also investigated. The as‐grown film, which was characterized by SEM, AFM, XRD and XPS, was deposited using 1 as single precursor through a low‐pressure chemical vapor deposition (LPCVD) process at a temperature as low as 600 °C. The results demonstrated that silicon(IV) amides can be promising single‐precursor for deposition of low‐temperature SiC films. |
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| Keywords: | Silicon Amides Synthesis Thermal properties Thin film |
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