Current status of selective area epitaxy by OMCVD

In this paper we review the current status of the achievements and understanding of selective area epitaxy using organometallic chemical vapor deposition (OMCVD) in the conventional mode, atomic layer epitaxy mode, and photon assisted growth mode. The selective epitaxy of GaAs, AlGaAs, and InP can be readily achieved. However, the selective epitaxy of compounds such as GaInAs has proven to be difficult due to a large compositional deviation. In addition, the control of the lateral thickness profile and facets at the edges has proven to be difficult for both binaries and their alloys. Selective epitaxy has been used to fabricate a variety of electronic and optoelectronic devices and low-dimensional structures. While considerable progress has been made, a better understanding of the processes is necessary before they can be applied to large scale optoelectronic integration.