Temperature,Current, and Voltage Dependences of Junction Failure in PIN Photodiodes |
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Authors: | Sahnggi Park Eundeok Sim Jeong‐Woo Park Jae‐Sik Sim Hyun‐Woo Song Su Hwan Oh Yongsoon Baek |
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Abstract: | A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190°C, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes. |
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Keywords: | Photodiodes detectors reliability junction failure dark current |
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