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Ion beam contacting of p-type GaP |
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| Authors: | Mertens A. Reckin J. |
| Affiliation: | 1.Institute for Physics, Department 06, Humboldt University Berlin, 1040, Berlin, GDR ; |
| Abstract: | Acta physica Academiae Scientiarum Hungaricae - Be-ion implantation into Au layers deposited on p-type GaP is used for making ohmic contacts. Be and Ga concentration profiles are measured by SIMS... |
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