Outdiffusion of impurities from GaP substrate material by means of postgrowth annealing

The present work is concerned with a reduction procedure for impurities in GaP substrate slices. Bý annealing of GaP in contact with high purity gallium the concentration of definite impurities is reduced. Heat treatment of GaP under phosphorus pressure introduces another efficient extraction mechanism which is based on phosphosilicate glass gettering and well known in silicon technology.