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Molecular dynamics simulation of (100)InGaAs/GaAs strained-layer relaxation processes |
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| Authors: | P. A. Ashu J. H. Jefferson A. G. Cullis W. E. Hagston C. R. Whitehouse |
| Affiliation: | a DRA, Electronics Sector, St Andrews Road Great Malvern, Worcs. WR14 3PS United Kingdom b Department of Applied Physics, University of Hull Hull HU6 7RX United Kingdom c Department of Electronic and Electrical Engineering, Sheffield University Sheffield S1 3JD United Kingdom |
| Abstract: | Molecular dynamics simulations on In1−xGaxAs/GaAs(100) systems are performed showing the dynamics of threading dislocations in the overlayers and the formation of misfit dislocations at the heterojunction interface. The developed code, using a modified Tersoff potential, simulates the threading dislocation dynamics in the InGaAs overlayer, and also the formation of interface misfit dislocations. Values for critical thicknesses are predicted and the atomic structure of the dislocation cores are determined. |
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