Correlation between formation conditions and breakdown voltage of anodic oxide films on aluminum |
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| Authors: | Vladimir Shulgov Eugene Ignashev Elena Gurskaja |
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| Institution: | (1) Department of Micro- and Nanoelectronics, Byelorussian State University of Informatics and Radioelectronics, Brovka str. 6, BY-220013 Minsk, Belarus |
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| Abstract: | Two series of samples were investigated: a) aluminum films with a sublayer of tantalum; b) industrial aluminum alloys AMg-2m;
D16; AMc; AD-1n. The optimum composition of re-anodizing electrolyte was chosen on the basis of a solution of citric acid
and ethylene glycol. The results of investigations of the sparking voltage at re-anodizing for various aluminum alloys and
thicknesses of primary porous oxide are presented. The analytical dependence of breakdown voltage value on forming voltage
value for alloy AD-1n was obtained. The original design of re-anodizing cell allowing increase of the sparking voltage was
developed. |
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| Keywords: | : Aluminum anodic oxide film re-anodizing breakdown voltage |
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