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Post-annealing influence on electrical properties and photoluminescence of B-N codoping ZnO thin films |
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| Authors: | YR Sui B Yao JH Yang T Yang M Ding XM Huang DZ Shen |
| Institution: | a Department of Physics, Jilin University, Changchun 130023, People’s Republic of China b Department of Physics, Jilin Normal University, Siping 136000, People’s Republic of China c Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021, People’s Republic of China |
| Abstract: | B-N codoped ZnO (ZnO:(B,N)) films were grown on quartz substrate by radio-frequency (rf) magnetron sputtering. The influence of post-annealing ambient on electrical and optical properties of ZnO:(B,N) films were investigated using Hall and Photoluminescence (PL) measurement, respectively. Electrical properties studies indicate that both post-annealing ZnO:(B,N) showed p-type conduction. However, compared with ZnO:(B,N) annealed in oxygen, the ZnO:(B,N) annealed in vacuum have low resistivity and high concentration. The PL spectra indicate that two new emission bands located at 3.303 and 3.208 eV originate from the recombination of A0X and FA related to N acceptor for the annealed p-ZnO:(B,N) in vacuum, but of A0X, FA related to Zn vacancy for the annealed p-ZnO:(B,N) in oxygen. The mechanism of influence of post-annealing on the electrical and optical properties of the ZnO:(B,N) film is discussed in this work. |
| Keywords: | p-type ZnO film B-N codoping Photoluminescence Magnetron sputtering |
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