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Origin of the 330 nm absorption band and effect of doping Yb in LiYF4 crystals
Authors:Jigang Yin  Yin Hang  Lianhan Zhang  Jing Xiong  Pengchao Hu
Affiliation:a Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China
b Graduate School of Chinese Academy of Sciences, Beijing 100039, PR China
Abstract:The electronic structures of LiYF4 (YLF) crystals containing F color center (YLF-F) and Yb doped YLF crystals (Yb3+:YLF, Yb2+:YLF) are systematically studied within the framework of the density functional theory. The calculated results indicate that the 330 nm absorption band originates from the F center in YLF crystals. Thus the doping of Yb3+ can weaken the 330 nm absorption band by competing with F vacancies in capturing free electrons arising after γ-irradiation and change to Yb2. By analyzing the lattice relaxation and the electronic structure of YLF containing Yb2+, we can reasonably believe that once Yb2+ is formed in YLF crystal, its compensating hole will turn out to be shared by two F nearest to Yb2+ forming a diatomic fluoride molecular ion (View the MathML source) perturbed by Yb2+, or to say VF color center. According to the molecular-orbital linear combination of atomic orbital (MO-LCAOs) theory, compared to the alkali halides, e.g. LiF, the View the MathML source in VF center in LiYF4 peaks at about 340 nm, which is in agreement with the experimental results.
Keywords:LiYF4 crystal   ABINIT   F and VF color centers   Doping   Absorption bands
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