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Investigation of carrier dynamics in Zn1−xMgxO by time-resolved photoluminescence |
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| Authors: | A Chernikov S Horst K Volz SW Koch B Laumer |
| Institution: | a Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany b Walter Schottky Institut, Technsiche Universität München, Am Coulombwall 3, 85748 Garching, Germany c Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany |
| Abstract: | The influence of the Mg concentration and lattice temperature on the carrier recombination dynamics in Zn1−xMgxO alloys has been studied by time-resolved photoluminescence for different emission and excitation energies. Carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations. Emission energy dependent dynamics were analyzed by the application of the theoretical model, yielding a characteristic localization energy of 60±15 meV for the sample with the highest Mg concentration of x=0.21. |
| Keywords: | ZnMgO Time resolved photoluminescence Carrier dynamics Disorder |
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