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The thermoluminescence properties of CdS films under nitrogen atmosphere |
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| Authors: | H Metin S Erat FM Emen AN Yazici N Kulcu |
| Institution: | a Mersin University, Department of Physics, 33343 Mersin, Turkey b Laboratory for High Performance Ceramics, EMPA-Swiss Federal Laboratories for Materials Testing & Research, CH-8600 Dübendorf, Switzerland c Department of Nonmetallic Inorganic Materials, ETH Zürich-Swiss Federal Institute of Technology, CH-8053 Zürich, Switzerland d K?rklareli University, Department of Chemistry, K?rklareli, Turkey e Gaziantep University, Department of Engineering Physics, Gaziantep, Turkey f Erciyes University, Department of Physics, Kayseri, Turkey g Mersin University, Department of Chemistry, 33343 Mersin, Turkey |
| Abstract: | Chemically deposited cadmium sulphide (CdS) films have been grown on glass at 60 °C and annealed at nitrogen atmosphere at different temperatures. The as-deposited film shows a mix phase of cubic and hexagonal. Once the film subjected to annealing the hexagonal phase becomes dominant and the crystal size increases due to these changes optical band gap energy decreases from 2.44 to 2.28 eV. The electrical conductivity increases depending on temperature and the film annealed at 423 K shows the highest conductivity. Thermoluminescence (TL) intensity of the films was measured after irradiating the films with 90Sr/90Y β-source and the trap depths were calculated after the TL curves deconvoluted by using the computer glow curve deconvolution (CGCD) method. It is observed that the as-deposited film has three different trap depths, at around 0.257, 0.372, and 0.752 eV corresponding to 383, 473, and 608 K, respectively. |
| Keywords: | Semiconductor Thin film CBD Crystal structure Thermoluminescence |
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