Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems |
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Authors: | Yeu-Jent Hu Chia-Hui Fang Yu-Fang Chen |
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Institution: | a Department of Electrical Engineering, Technology and Science Institute of Northern Taiwan, Taipei 112, Taiwan, Republic of China b Group of Abel and Lie Operations In Sciences and Quantum Electro-optical Science and Technology Laboratory (GALOIS-Quest-Lab), Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan, Republic of China. |
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Abstract: | The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement. |
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Keywords: | Multiple quantum well Metal organic vapor phase epitaxy Light-emitting diodes Semiconductor ternary compound |
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