Photoemission and energy loss spectroscopy on semiconductor surfaces

The application of multiple experimental techniques to silicon surface studies is discussed. Two specific cases are considered: the chemisorption of oxygen on silicon at coverages up to one monolayer and the intrinsic surface states on cleaved and on annealed Si (111) surfaces. It is shown that by combining electron energy loss spectroscopy and ultraviolet photoemission spectroscopy, one can obtain an approximate energy level model for both occupied and unoccupied states