The use of secondary ion mass spectrometry in surface analysis

Secondary ion mass spectrometry (SIMS) is based on the bombardment of solids by ions and subsequent mass analysis of the sputtered ions or of the post-ionized neutrals. Various models have been proposed for the emission of secondary ions from the target. These models can roughly be grouped into two categories: (a) lonization takes place outside the target; the sputtered particles are assumed to leave the target in an excited or super-excited state; ionization can then result from such processes as Auger de-excitation or resonance ionization. (b) Ions are generated inside the target by collision cascades initiated by a primary impinging ion. Experimental data of the element- and matrix-dependent ion yield and estimates of the minimum detectable concentrations are shown as well as the rate of consumption of the target. Methods for efficient use of the sputtered material will be discussed. Examples of the wide range of applications of SIMS for determination of the chemical composition and structure of the surface layer and for imaging of the distribution of elements in the surface are given. The SIMS results are compared with those of Auger and Ion Scattering Spectrometry. The essentially non-destructive method of static SIMS is shown to be a powerful tool for the investigation of the outermost atomic layers of a solid.