No fluorescence decay from low-lying electronic states excited into single vibronic levels with synchrotron radiation |
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Authors: | Odile Benoist D azy,Ricardo López-Delgado,André Tramer |
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Affiliation: | Laboratoire de Photophysique Moleculaire, CNRS - Paris-Sud University, Centre d''Orsay, Bât, 213, 91405 - Orsay, France |
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Abstract: | Fluorescence decay of NO has been studied by single photon counting using the synchrotron radiation from the Orsay Electron Storage Ring (ACO) as a source of excitation. Emissions from A2Σ+(υ = 0,1,2,3), B2Π(υ = 5), C2Π(υ = 0, 1) and D2Σ+(υ = 0, 1, 2, 3) levels have been observed in function of NO gas pressure in the 0.02–4 torr range. Collision-free lifetimes and self-quenching rate constants have been derived from these measurements for all these levels and compared to previous data. Particular attention has been paid to the C2Π(υ = 0) level decay properties. By narrow-band (≈ 45 cm?1) excitation inside the rotational envelope of this level we show that the decay is non-exponential with a short-living component (≈ 3 ns) a long-living one (≈ 20 ns). We develop a number of arguments in order to prove the short-living levels (J > 5 or 7) are weakly predissociated. |
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