Magnetic field dependence of the specific heat of heavily doped n-type silicon

The low temperature specific heat of an n-type phosphorous doped silicon sample containing 5 × 10¹⁸ charge carriers/cm³ in zero magnetic field and in a magnetic field of 28.5 kGauss has been measured. Within the experimental accuracy of the experiments no magnetic contribution to the specific heat has been detected. This result is discussed in the light of recent E.S.R. experiments on the same impurity banded silicon sample.