退火对Mn和N共掺杂的Zn0.88Mn0.12O:N薄膜特性的影响

以NH₃为掺N源，采用电子束反应蒸发技术生长了Mn和N共掺杂的Zn_1-xMn_xO:N薄膜，生长温度为300℃，然后在O₂气氛中400℃退火0.5 h.X射线衍射测量表明，Zn_0.88Mn_0.12O(Mn掺杂)薄膜或Zn_0.88Mn_0.12O:N(Mn和N共掺杂)薄膜仍具有单一晶相纤锌矿结构，未检测到杂质相关键词：ZnO薄膜Mn和N共掺杂电学特性磁特性

Influence of annealing on the properties of Mn and N co-doped Zn0.88Mn0.12O:N films

Mn and N codoped ZnO (or Zn_1-xMn_xO:N) films were grown on Si(001) and quartz substrates via reactive electron beam evaporation in the NH₃ atmosphere. The growth temperature was 300℃. The as-grown Zn_0.88Mn_0.12O:N film was cut into two pieces and one of them was then annealed in O₂ atmosphere at 400℃ for 30 min. X-ray diffraction measurements reveal that Zn_0.88Mn_0.12O or Zn_0.88Mn_0.12O:N films have the single-phase wurtzite structure. The (002) diffraction peak of Zn_0.88Mn_0.12O:N film is located at a smaller angle and has a wider line width compared with that of Zn_0.88Mn_0.12O film. Hall measurement shows that the as-grown Zn_0.88Mn_0.12O:N film is the n-type and changes to p-type after annealing. DC magnetization analysis shows that the as-grown Zn_0.88Mn_0.12O:N films are ferromagnetic at room temperature (RT) but the ferromagnetism (FM) is weak and unstable. However, the FM of Zn_0.88Mn_0.12O:N film at RT is remarkably enhanced and its stability efficiently improved by annealing in O₂ atmospher. The origin of FM of Zn_0.88Mn_0.12O:N film at RT, as well as the mechanisms of its FM enhancement and stability improvement by annealing are discussed.