Chemical bath deposition of SnO2 and Cd2SnO4 thin films |
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| Authors: | Hani Khallaf Chia-Ta Chen Liann-Be Chang Oleg Lupan Aniruddha Dutta Helge Heinrich Firoze Haque Enrique del Barco Lee Chow |
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| Affiliation: | 1. Department of Physics, University of Central Florida, Orlando, FL 32816, USA;2. Graduate Institute of Electro-Optical Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan;3. Green Technology Research Center, Chang Gung University, Kweishan, Taoyuan 333, Taiwan;4. Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, 168 Stefan cel Mare Boulevard, MD-2004 Chisinau, Republic of Moldova;5. Advanced Materials Processing and Analysis Centre, Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816, USA |
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| Abstract: | A new approach of chemical bath deposition (CBD) of SnO2 thin films is reported. Films with a 0.2 μm thickness are obtained using the multi-dip deposition approach with a deposition time as little as 8–10 min for each dip. The possibility of fabricating a transparent conducting oxide layer of Cd2SnO4 thin films using CBD is investigated through successive layer deposition of CBD-SnO2 and CBD-CdO films, followed by annealing at different temperatures. High quality films with transmittance exceeding 80% in the visible region are obtained. Annealed CBD-SnO2 films are orthorhombic, highly stoichiometric, strongly adhesive, and transparent with an optical band gap of ～4.42 eV. Cd2SnO4 films with a band gap as high as 3.08 eV; a carrier density as high as 1.7 × 1020 cm?3; and a resistivity as low as 1.01 × 10?2 Ω cm are achieved. |
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