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Plasma Etching in InAlN/GaN Hemt Technology
Authors:Filippov  I A  Shakhnov  V A  Velikovskii  L E  Brudnyi  P A  Demchenko  O I
Institution:1.Bauman Moscow State Technical University, Moscow, Russia
;2.National Research Tomsk State University, Tomsk, Russia
;3.National Research Tomsk Polytechnic University, Tomsk, Russia
;
Abstract:Russian Physics Journal - The experimental data on the plasma etching of Si3N4 for sub-100 nm gate fabrication for high electron mobility transistors (HEMTs) based on InAlN/GaN heterostructures are...
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