1.Bauman Moscow State Technical University, Moscow, Russia ;2.National Research Tomsk State University, Tomsk, Russia ;3.National Research Tomsk Polytechnic University, Tomsk, Russia ;
Abstract:
Russian Physics Journal - The experimental data on the plasma etching of Si3N4 for sub-100 nm gate fabrication for high electron mobility transistors (HEMTs) based on InAlN/GaN heterostructures are...