Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy |
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| Authors: | JJ Wang ZB Fang T Ji WY Ren YY Zhu G He |
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| Institution: | 1. Department of Physics, Shaoxing University, Shaoxing 312000, China;2. College of Physics and Electronic Information, China West Normal University, Nanchong 637002, China;3. Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China;4. School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, China |
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| Abstract: | Tm2O3 crystalline films have been deposited on Si (0 0 1) by molecular beam epitaxy (MBE). Band alignments of Tm2O3/Si gate stacks were studied by X-ray photoelectron spectroscopy (XPS). According to XPS measurements, it can be noted that a valence-band offset of ?3.1 ± 0.1 eV and a conduction-band offset of 2.3 ± 0.3 eV for the Tm2O3/Si heterojunction have been obtained. Based on analysis from O 1s energy-loss spectrum, the energy gap of Tm2O3 is determined to be 6.5 ± 0.3 eV. A relatively thicker interfacial SiOx layer was observed for the as-annealed samples. However, no apparent change in band alignment has been observed for Tm2O3/Si heterojunction with the formation of interface layer, which has been discussed in detail. |
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