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Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films |
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| Authors: | Voitsekhovskii A. V. Nesmelov S. N. Dzyadukh S. M. Dvoretsky S. A. Mikhailov N. N. Sidorov G. Yu. |
| Affiliation: | 1.National Research Tomsk State University, Tomsk, Russia ;2.Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia ; |
| Abstract: | Russian Physics Journal - The current – voltage characteristics of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs substrates in the temperature range 9–300... |
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