GaAs衬底上（ZnS）n／（ZnSe）n（001）超晶格的光学性质

本文用Ｌｉｎｅａｒｉｚｅｄ－Ｍｕｆｆｉｎ－Ｔｉｎ Ｏｒｂｉｔａｌｓ能带方法，计算ＧａＡｓ衬底上（ＺｎＳ）ｎ／（ＺｎＳｅ）ｎ（００１）超晶格的能带结构。计算中采用外加调整势进行带隙修正，从而得到较准确的能带结构和波函数。在此基础上计算了超晶格系统的光学介电函数虚部ε２（ω）。结果表明，该超晶格系统的光学性质结合了ＺｎＳ和ＺｎＳｅ体材料光学性质的特点，在相当宽的能量范围内有较好的光谱响应，并且该超晶格

The Optical Properties of Strained Superlattice (ZnS)_n/(ZnSe)_n(001)

The Linearized-Muffin-Tin Orbitals(LMTO) method is adopted to calculate theband structures of the strained superlattice (ZnS)./(ZnSe).(0O1) grown on the GaAssubstrate. In our calculat1on the external adjusted potential is used to solve very smallband gap problem. On the basis of calculation of band structure and wave function s2(w)for this system, we calculated the imaginary part of dieletric.function of the superlatticsystem. The results show that the optical pr0perties of (ZnS)./(ZnSe).(OO1) grown on theGaAs substrate would have the opticaI properties of bulk ZnS and ZnSe,and the rathergood optical response over a wide range of photon energy. Futhermore, the superlatticsare direct band gap matrials. Thus the superlattices will become the promising materialsfor optoelectronic device application.