Pulsed laser synthesis of titanium silicides using a Q-Switched Nd: Glass laser

Titanium films 120 nm thick deposited on single-crystalline silicon (c-Si) as well as poly-Si/SiO₂/c-Si substrates were subjected to Nd: glass laser irradiation. Laser fluences of 1,1.5, and 2 J/cm² were used at the pulse duration of 30 ns. From RBS analysis it follows that on c-Si substrate titanium suicide is formed using one pulse of 1.5 J/cm² energy density. On the substrate with surface overlayers lower fluence (1 J/cm²) was sufficient. Under these conditions the sheet resistance of the samples decreased from the initial value 5 / to 2–3 /. The smaller threshold density of energy for suicide formation in Ti/polySi/SiO₂/c-Si structure is shown to be a consequence of the SiO₂ underlayer, which is a poorer heat conductor than silicon. The experimental results of the suicide synthesis are in semi-quantitative accordance with the numerical computations of the temperature vs time evolution and depth temperature distribution in our samples.