| 重掺杂发射区中禁带宽度和少子复合寿命的确定方法 |
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| 引用本文： | 郑茳,冯耀兰.重掺杂发射区中禁带宽度和少子复合寿命的确定方法[J].电子与信息学报,1989,11(4):439-443. |
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| 作者姓名： | 郑茳 冯耀兰 |
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| 作者单位： | 南京工学院微电子中心 南京
(郑茳)，南京工学院微电子中心 南京(冯耀兰) |
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| 摘 要： | 禁带宽度和少子复合寿命是硅晶体管发射区中重要的物理参数。本文利用p-n结反向扩散电流的温度特性和借助于线性外推法,提出了一种确定绝对零度时禁带宽度的新方法。由于发射区重掺杂,本文考虑了载流子的费米-狄拉克统计分布。提出了确定发射区中少子复合寿命的方法。该方法简便实用。
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| 关 键 词： | 重掺杂发射区 禁带宽度 少子复合寿命 |
| 收稿时间： | 1987-7-17 |
| 修稿时间： | 1988-3-31 |
A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER |
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| Zhen Jiang,Feng Yaolan.A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER[J].Journal of Electronics & Information Technology,1989,11(4):439-443. |
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| Authors: | Zhen Jiang Feng Yaolan |
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| Institution: | Microelectronics Center of Nanjing Institute of Technology, Nanjing |
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| Abstract: | Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor. Using temperature characteristics obtained from the reverse diffusion current of p-n junction and by means of linear extrapolation, a new method for determination of the energy gap at OK is presented. Based on the carrier Fermi-Dirac statistic distribution, a method for determination of minority-carrier recombination lifetime in highly doped emitter is presented. This test method is simple and can be used in practice. |
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| Keywords: | Highly doped emitter Energy gap Minority-carrier recombination lifetime |
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