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Influence of electromagnetic fluctuations on the resonant tunneling of electrons
Authors:H T Imam  V V Ponomarenko  D V Averin  
Institution:

a Department of Physics, State University of New York, Stony Brook, NY 11794, USA

b A.F. Ioffe Physical Technical Institute, 194021, St. Petersburg, Russian Federation

c Department of Physics, Moscow State University, Moscow 119899 GSP, Russian Federation

Abstract:We have considered the influence of electromagnetic fluctuations on electron tunneling via one non-degenerate resonant level, the problem that is relevant for electron transport through quantum dots in the Coulomb blockade regime. We show that the overall effect of the fluctuations depends on whether the electron bands in external electrodes are empty or filled. In the empty band case, depending on the relation between the tunneling rate Γ and characteristic frequency Ω of the fluctuations, the field either simply shifts the conductance peak (for rapid tunneling, Γ much greater-than Ω) or broadens it (for Γ much less-than Ω). In the latter case, the system can be in three different regimes for different values of the coupling g between electrons and the field. Increasing interaction strength in the region g < 1 leads to gradual suppression of the conductance peak at the bare energy of the resonant level ε0, while at g much greater-than 1 it leads to the formation of a new peak of width Image at the energy ε0 + Ecis a charging energy. For intermediate values of g the conductance is non-vanishing in the entire energy range from ε0 to ε0 + Ec. For filled bands the problem is essentially multi-electron in character. One consequence of this is that, in contrast to the situation with the empty band, the fluctuations of the resonant level do not suppress conductance at resonance for g < 1. At g> 1 a Coulomb gap appears in the position of the resonant level as a function of its bare energy which leads to suppression of conductance.
Keywords:
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