Etching of metals by means of organic radicals

A new method for the etching of In, Sn, Pb, Sb, Bi, and Zn films in methane and acetone discharges was examined with respect to various parameters such as electrode temperature, power density, bias, and reaction period. The etching species are assumed to be CH₃ radicals forming a volatile metallorganic compound, since etch rates in hydrogen plasmas or argon sputter rates are orders of magnitude lower. Etch rates up to 1600 Å/min could be obtained.Presented in part at the I.S.P.C.-7, Eindhoven, 1985.