Surface space-charge layer analysis in semi-insulating GaAs containing deep levels in bulk |
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| Authors: | M. Borisov K. Germanova Ch. Hardalov T. Tosheva |
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| Affiliation: | (1) Institute of Solid State Physics, Bulgarian Academy of Sciences, BG-1184 Sofia, Bulgaria;(2) Solid State Physics Department, Sofia University, BG-1126 Sofia, Bulgaria |
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| Abstract: | A computer simulation study of space-charge layers at the surface of semiinsulating GaAs containing deep EL2 and Cr centers in bulk is presented. Substantial influence of the deep bulk levels on the main characteristics of the surface space charge layers, is demonstrated. The special features of these characteristics and the conditions of their arising are discussed. |
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| Keywords: | 61.70 73.40 |
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