Near-IR laser inelastic electronic light scattering spectroscopy on transitions between ground and excited states of acceptor centers in GaAs and InP crystals |
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Authors: | B Kh Bairamov B P Zakharchenya V V Toporov |
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Institution: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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Abstract: | We report the development of a method for recording the low-temperature (T=6 K) near-IR inelastic light scattering spectra and the observation of electronic scattering on the transitions 1s
3/2(Γ8) → 2s
3/2(Γ8) between the ground and excited states of different shallow acceptor centers in a n-type semi-insulating crystal si-GaAs (n=1.0 × 108 cm−3) and in a doped p-InP crystal (p=3.6×1017 cm−3). Moreover, a new line, associated with the transition 1s
3/2(Γ 8) → 2p
3/2(Γ8) and due to a dielectric local mode, recorded for the first time in the spectra of narrow-gap semiconductors, was found in
the residual-frequency band in the p-InP spectrum between TO(Γ) and LO (Γ) phonons.
Pis’ma Zh. éksp. Teor. Fiz. 67, No. 5, 334–339 (10 March 1998) |
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Keywords: | |
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