| SPRITE探测器的电阻问题 |
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| 引用本文： | 蔡毅 冯江敏. SPRITE探测器的电阻问题[J]. 红外技术, 1998, 20(5): 1-5 |
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| 作者姓名： | 蔡毅 冯江敏 |
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| 作者单位： | 昆明物理研究所 |
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| 摘 要： | ＳＰＲＩＴＥ探测器的电阻是一个重要的器件参数。研究了Ｈｇ１－ｘＣｄｘＴｅ材料组分和电阻率、芯片厚度和表面电导等因素对该电阻的影响，并就实验数据进行了比较结果表明：ＳＰＲＩＴＥ器件的室温电阻主要是受Ｈｇ１－ｘＣｄｘＴｅ材料组份和芯片厚度的影响。而其液氮温度电阻则主要是受芯片表面电导的影响。
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| 关 键 词： | SPRITE 组分 芯片厚度 表面电导 电阻 |
Resistance of SPRITE Detector |
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| Cai Yi,Feng Jiangmin,Wang Jiaku,Hong Jinhua. Resistance of SPRITE Detector[J]. Infrared Technology, 1998, 20(5): 1-5 |
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| Authors: | Cai Yi Feng Jiangmin Wang Jiaku Hong Jinhua |
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| Abstract: | The resistance of SPRITE detector is an important device parameter.The composition and resistivity of Hg 1-x Cd xTe material,chip thickness and surface conduction bear upon the resistance.In the paper,these effects are studied.The results show that the device room resistance is mainly effected by the composition of Hg 1-x Cd xTe material and chip thickness while the liquidnitrogen resistance is mainly effected by surface conduction of the HgCdTe crystal. |
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| Keywords: | SPRITE Composition Chip thickness Surface conduction Resistance |
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