Intense THz-radiation from semiconductors under magnetic field irradiated with femtosecond laser pulses |
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Authors: | Liu Zhenlin Ohtake Hideyuki Izumida Shinji Ono Shingo Sarukura Nobuhiko |
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Affiliation: | (1) Institute for Molecular Science (IMS), Myodaiji, Okazaki, 444-8585, Japan |
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Abstract: | The THz-radiation power from InAs reaches sub-mW level in a 1.7-T magnetic field irradiated with femtosecond laser pulses of 1.5-W average power. The THz-radiation power is related almost quadratically both to the magnetic field and to the excitation laser power. Furthermore, the THz-radiation spectrum is found to be controlled by the excitation pulsewidth, chirp direction of the excitation pulse, and the magnetic field. |
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Keywords: | femtosecond laser pulses semiconductors THz-radiation |
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