Regularities of the photoluminescence of porous silicon after chemical etching in HF |
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| Authors: | V A Makara N S Bolotovets O V Vakulenko A I Datsenko S N Naumenko T V Ostapchuk O V Rudenko |
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| Institution: | (1) Taras Shevchenko Kiev State University, 6, Academician Glushko ave., 252127 Kiev, Ukraine;(2) “Orion” Scientific Research Institute, National Academy of Sciences of Ukraine, Kiev, Ukraine |
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| Abstract: | The effect of chemical treatment of porous silicon samples by HF on its photoluminescence and its evolution with time in sample
aging in air is investigated. It is shown that the effect of HF on the luminescence parameters depends on the duration of
the treatment and the initial photoluminescence intensity of the sample. It is found that chemical etching in HF accelerates
the growth of the total luminescence intensity in aging of the sample in air. The evolution of the photoluminescence spectrum
in aging of the sample in air after chemical etching can be explained within the framework of the quantum-size model of the
luminescence of porous silicon.
Presented at the Fall Meeting of the Material Research Society, December 1–5, 1997, Boston, USA
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 3, pp. 423–427, May–June, 1999. |
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| Keywords: | porous silicon photoluminescence chemical etching effect of the atmosphere |
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