用Pendell?sung条纹研究硅单晶中微缺陷

以Ｘ射线衍射统计动力学为基础，讨论了一种用Ｘ射线截面形貌图测定静态Ｄｅｂｙｅ－Ｗａｌｌｅｒ因子的方法．通过仔细分析截面形貌图中Ｐｅｎｄｅｌｌ?ｓｕｎｇ干涉条纹振荡周期和强度的变化，得到了经热处理后的ＣＺ硅和ＭＣＺ硅单晶样品的静态Ｄｅｂｙｅ－Ｗａｌｌｅｒ因子，并求得样品中氧沉淀的浓度和平均尺寸．这种定量化的研究方法为揭示晶体中微缺陷的性质及形成机理提供了新途径．关键词：

CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES

Based on the statistical theory of X-ray dynamical diffraction, a method to obtain the static Debye-Waller facter from section topographs is described. By analyzing the intensity distribution of the Pendelldsung fringes in the X-ray diffraction topograghs for heat treated CZ and MCZ silicon single crystals, the number density and the size of the oxygen precipitates which are smaller than X-ray topographic resolution are estimated. This quantitative analysis method provides a new means of studying the micro-defects.