| Si在水汽中氧化传质机制的H218O/H216O同位素示踪研究 |
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| 引用本文： | 龚佳,蒋益明,钟澄,邓博,刘平,李劲. Si在水汽中氧化传质机制的H218O/H216O同位素示踪研究[J]. 物理学报, 2009, 58(2): 1305-1309 |
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| 作者姓名： | 龚佳 蒋益明 钟澄 邓博 刘平 李劲 |
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| 作者单位： | 复旦大学材料科学系，上海 200433 |
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| 基金项目： | 国家自然科学基金(批准号:10621063，50571027，50701010)、国家科技基础条件平台建设项目(批准号:2005DKA10400-Z13)和上海市重点学科项目(批准号:B113)资助的课题. |
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| 摘 要： | 采用同位素H216O/H218O接续氧化同位素示踪方法，研究了单晶硅在1100 ℃水汽中氧化的微观传质机制.在H216O，H218O分别氧化和H216O/H218O接续氧化处理后，研究氧化产物形态和结构.并用二次离子质谱仪(SIMS)研究了同位素关键词：同位素示踪218O')" href="#">H218O替位扩散硅
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| 关 键 词： | 同位素示踪 H218O 替位扩散 硅 |
| 收稿时间： | 2008-02-03 |
Revealing the transport mechanisms of silicon oxidation by H218O/H216O isotopic labeling |
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| Gong Ji,Jiang Yi-Ming,Zhong Cheng,Deng Bo,Liu Ping and Li Jin. Revealing the transport mechanisms of silicon oxidation by H218O/H216O isotopic labeling[J]. Acta Physica Sinica, 2009, 58(2): 1305-1309 |
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| Authors: | Gong Ji Jiang Yi-Ming Zhong Cheng Deng Bo Liu Ping Li Jin |
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| Abstract: | A new method was proposed to investigate the transport mechanism of silicon oxidation at 1100 ℃ using H216O/H218O isotopic labeling. The formation and structure of silicon oxide film was analysed. The distribution of 16O and 18O in the oxide film was analysed by means of secondary ion mass spectroscopy (SIMS). The results demonstrate that the oxide film is non-crystalline during the oxidation of silicon in the water vapor and the transport mechanism is substitutional diffusion mechanism. |
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| Keywords: | isotopic labeling H218O substitutional mechanism silicon |
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