Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals |
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Authors: | P Basa ZsJ Horvth T Jszi AE Pap L Dobos B Pcz L Tth P Szllsi |
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Institution: | aHungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, P.O. Box 49, H-1525, Hungary |
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Abstract: | In this work, the electrical and memory behaviour of metal-silicon nitride-silicon structures with an embedded nanocrystalline silicon layer, which either consists of separated silicon nanocrystals, or is a continuous nanocrystalline layer, are presented. The structures were prepared by low-pressure chemical vapour deposition (LPCVD). The effect of the duration of deposition and the structure of the nanocrystalline layer were studied. The writing/erasing behaviour was similar for all the structures, but the retention properties were much worse in the structure with a continuous nanocrystalline layer, than in the structures with separated Si nanocrystals. This indicates that Si nanocrystals play role in charge storage in the studied structures. |
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Keywords: | Nonvolatile memory MNS Silicon nitride Si nanocrystals LPCVD |
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