Optical properties of thin Cu2ZnSnS4, films produced by RF magnetron sputtering

Optical properties of thin Cu₂ZnSnS₄ films produced by RF magnetron sputtering of preliminarily synthesized material are studied. Transmission and reflection coefficients are studied in a range from 0.4 to 26 μm. The optical band-gap width depending on substrate temperature is estimated; in optimal modes, it is equal to 1.47 eV. The study of electrical properties shows that Cu₂ZnSnS₄ possesses low charge-carrier mobility, μ = 1.9 cm²/(V s), at room temperature and hole concentration р = 5 × 10¹⁸ cm^–3. Electron microscopy shows that the film possesses a polycrystalline structure with a crystallite size on the order of 100 nm.