Decomposition of SiCl4 and deposition of Si in inductively coupled plasmas of H2+SiCl4 |
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| Authors: | R Manory R Avni A Grill |
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| Institution: | (1) Department of Materials Engineering, Ben-Gurion University of the Negev, P.O.B. 653, Beer-Sheva, Israel;(2) Nuclear Research Center Negev, P.O.B. 9001, Beer-Sheva, Israel |
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| Abstract: | The mechanism of homogeneous reactions in plasmas of H2+5%SiCl4 was studied by mass spectrometry and was compared to the mechanism observed in plasmas of Ar+H2+SiCl4. Contrary to the behavior with Ar, the results indicate that without argon the SiCl4 molecule undergoes only fragmentation and the deposition proceeds through SiCl2. No polymerization was observed. The deposition rates of  c-Si were lower and the amounts of chlorine incorporated in the films were higher in the plasma of SiCl4+H2 than in the argon-containing plasma. |
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| Keywords: | SiCl4 plasma Si deposition |
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