| 超薄栅MOS器件热载流子应力下SILC的产生机制 |
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| 引用本文： | 杨国勇,霍宗亮,王金延,毛凌锋,王子欧,谭长华,许铭真.超薄栅MOS器件热载流子应力下SILC的产生机制[J].半导体学报,2003,24(6). |
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| 作者姓名： | 杨国勇 霍宗亮 王金延 毛凌锋 王子欧 谭长华 许铭真 |
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| 作者单位： | 北京大学微电子学研究所,北京,100871 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 通过测量界面陷阱的产生,研究了超薄栅nMOS和pMOS器件在热载流子应力下的应力感应漏电流(SILC).在实验结果的基础上,发现对于不同器件类型(n沟和p沟)、不同沟道长度(1、0.5、0.275和0.135μm)、不同栅氧化层厚度(4和2.5nm),热载流子应力后的SILC产生和界面陷阱产生之间均存在线性关系.这些实验证据表明MOS器件减薄后,SILC的产生与界面陷阱关系非常密切.
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| 关 键 词： | 应力感应漏电流 热载流子应力 超薄栅氧化层 MOS器件 |
Experimental Evidence of Interface-Trap-Related SILC in Ultrathin (4nm- and 2.5nm-Thick) n-MOSFET and p-MOSFET Under Hot-Carrier Stress |
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| Yang Guoyong,Huo Zongliang,Wang Jinyan,Mao Lingfeng,Wang Ziou,Tan Changhua,Xu Mingzhen.Experimental Evidence of Interface-Trap-Related SILC in Ultrathin (4nm- and 2.5nm-Thick) n-MOSFET and p-MOSFET Under Hot-Carrier Stress[J].Chinese Journal of Semiconductors,2003,24(6). |
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| Authors: | Yang Guoyong Huo Zongliang Wang Jinyan Mao Lingfeng Wang Ziou Tan Changhua Xu Mingzhen |
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| Abstract: | Stress-induced leakage current (SILC) of ultrathin gate oxide is investigated by observing the generation of interface traps for n-MOSFET and p-MOSFET under hot-carrier stress.It is found experimentally that there is linear correlation between the generation of interface traps and SILC for both types of MOSFET with different channel lengths (including 1,0.5,0.275,and 0.135μm) and different gate oxide thickness (4nm and 2.5nm).These experimental evidences show that the SILC has a strong dependence on interface traps. |
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| Keywords: | SILC hot carrier stress ultra-thin gate oxide MOSFET |
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