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Temperature dependence of the linewidths of shallow impurity spectral lines |
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| Authors: | Jan Golka Jaroslaw Trylski MS Skolnick RA Stradling Y Couder |
| Institution: | Institute of Physics, Polish Academy of Sciences, 02-668 Warzawa, Poland;Institute of Theoretical Physics, Warsaw University, 00-681 Warszawa, Poland;Clarendon Laboratory, Park Road, Oxford, U.K.;Laboratoire de Physique des Solides, Ecole Normale Supérieure, 24, rue Lhomond, Paris, France |
| Abstract: | A pronounced broadening of shallow donor transition linewidths in GaAs and CdTe by a factor of 2-2·5 on raising the sample temperature from 4 K to 10 K is reported. At low temperatures such impurity lines are inhomogeneously broadened by the Stark effect due to random electric fields arising from the ionized impurities in the crystal. The experimental observation is analysed and explained in terms of the temperature dependent spatial correlation between ionized donors and acceptors in the crystal. |
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