Electrical properties of cadmium and zinc doped CuInS2

The electrical resistivity and mobility of Cd and Zn doped CuInS₂ single crystals grown by a Bridgman technique have been investigated. Crystals annealed in Cd or Zn vapor at high temperatures (～ 800°C) exhibit degenerate behaviour while those crystals annealed at more moderate temperatures (～650°C) show ionized impurity conduction with a shallow activation energy on the order of 0.004 eV. Resistivities as low as 0.15 Ω-cm and mobilities as high as 90 cm²/v-sec have been observed.