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Highly luminescent nanocrystal quantum dots fabricated by lattice-type mismatched epitaxy
Authors:W Heiss  E Kaufmann  M Bberl  T Schwarzl  G Springholz  G Hesser  F Schffler  K Koike  H Harada  M Yano  R Leitsmann  LE Ramos  F Bechstedt
Institution:aInstitut für Halbleiter und Festkörperphysik, Johannes Kepler Universität, Altenbergerstraße 69, 4040 Linz, Austria;bOsaka Institute of Technology, Asahi-ku Ohmiya, Osaka 535-8585, Japan;cInstitut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität Jena, 07743 Jena, Germany
Abstract:Lattice-type mismatched heteroepitaxy is demonstrated as a novel concept for the fabrication of almost ideal, highly luminescent nanocrystal quantum dots that are coherently embedded in a single-crystalline matrix. In this approach, the formation of quantum dots is induced by transformation of a metastable epitaxial 2D quantum well into an array of isolated nanocrystals with-highly symmetric shape. This process is driven by the lattice-type mismatch between the constituent materials and the resulting miscibility gap. The investigated PbTe/CdTe heterosystem has a model character because it combines two compounds with different cubic lattice types but almost identical lattice constants. The obtained epitaxial nanocrystals exhibit outstanding properties such as a well-defined symmetric shape, the absence of strain, intermixing and a wetting layer, which is in contrast to the conventional Stranski–Krastanow quantum dots. The small-rhomboedric-cubo-octahedron PbTe/CdTe nanocrystals on GaAs substrates display intense room temperature mid-infrared luminescence as is crucial for device applications. Ab initio density functional theory is used to clarify the interface structure, indicating that the covalent and ionic bonding character of CdTe and PbTe is maintained across the interface.
Keywords:Nanocrystals  II–  VI semiconductors  Solid–  solid interfaces  Photoluminescence
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