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An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient |
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| Institution: | Xie Gang a)b),Tang Cen a),Wang Tao a),Guo Qing a),Zhang Bo c),Sheng Kuang a),and Wai Tung Ng b) a)College of Electrical Engineering,Zhejiang University,Hangzhou 310027,China b)The Edward S.Rogers Sr.Electrical and Computer Engineering Department,University of Toronto,Toronto,Ontario,Canada,M5S 1A1 c)State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China |
| Abstract: | |
| Keywords: | AlGaN/GaN high-electron mobility transistor air-bridge field plate breakdown voltage breakdown voltage temperature coefficient |
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