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A low specific on-resistance SOI MOSFET with dual gates and a recessed drain
Authors:Luo Xiao-Rong ab  Luo Yin-Chun b  Fan Ye b  Hu Gang-Yi a  Wang Xiao-Wei b  Zhang Zheng-Yuan a  Fan Yuan-Hang b  Cai Jin-Yong b  Wang Pei b  and Zhou Kun
Institution:b) a)Science and Technology on Analog Integrated Circuit Laboratory,Chongqing 400060,China b)State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China
Abstract:
Keywords:MOSFET  silicon-on-insulator  breakdown voltage  specific on-resistance
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