The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET |
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| Authors: | Wang Bin Zhang He-Ming Hu Hui-Yong Zhang Yu-Ming Zhou Chun-Yu Wang Guan-Yu and Li Yu-Chen |
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| Affiliation: | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China |
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| Abstract: | The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor(pMOSFET) has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET. |
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| Keywords: | strained-Si pMOSFET flatband voltage threshold voltage doping |
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