Supersaturated Si-As alloy formation by ion implantation and pulsed electron beam annealing |
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| Authors: | A Turos O Meyer J Geerk |
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| Institution: | (1) Kernforschungszentrum Karlsruhe, Institut für Angewandte Kernphysik I, D-7500 Karlsruhe 1, Fed. Rep. Germany;(2) Present address: Institute of Nuclear Research, Warsaw, Poland |
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| Abstract: | Supersaturated surface alloys produced by very high dose (0.8–2.6×1017cm–2) implantation of As-ions into silicon and subsequent pulsed electron-beam annealing have been investigated by means of the channeling technique. The maximum solubility limit of 7×1021 As/cm3 has been determined. It exceeds the equilibrium solubility limit by more than a factor of 4. Angular scan measurements indicated that for doses above 1×1017cm–2 As atoms are displaced by about 0.12 Å from the regular lattice sites. |
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| Keywords: | 61 70 81 40 |
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