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The finite-temperature photoluminescence correlation function in semiconductor heterostructures |
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| Authors: | M Tavares G E Marques C Tejedor |
| Institution: | (1) Departamento de Física, Universidade Federal de S ao Carlos, S ao Carlos, SP 13565-905, Brazil, BR;(2) Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco, Madrid 28049, Spain, ES |
| Abstract: | We report the inclusion of temperature effects on the Mahan-Nozières-De Dominicis framework to study both many-body and temperature effects in photoluminescence spectra of doped semiconductors. The electronic part of the correlation function characterizes the photoluminescence spectra. We have treated the optical valence hole as a localized scattering potential center and studied effects of the electron-hole interaction enhancement on the photoluminescence spectra leading to the appearance of shake-up structures. We also have identified a term in the correlation function which represents the finite-temperature contribution to the intensities of the shake-up structures. The method is used to study the magnetophotoluminescence of modulation-doped quantum wells with a weak periodic lateral potential. Received 20 November 1998 and Received in final form 5 March 1999 |
| Keywords: | PACS 71 10-w Theories and models of many electron systems[:AND:]78 66-w Optical properties of specific thin films surfaces and low dimensional structures |
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