Diffusion,solubility, and electrical properties of scandium and praseodymium in silicon |
| |
Authors: | S Zainabidinov D E Nazyrov |
| |
Institution: | (1) Mirzo Ulugbek National University of Uzbekistan, Uzbekistan |
| |
Abstract: | An integrated study of diffusion, solubility, and electrical properties of scandium and praseodymium in silicon annealed in
various media and temperature ranges (1100–1280 °C) was performed for the first time. The tracer technique, autoradiography,
measurements of isothermic capacity and current relaxation, conductivity, and the Hall effect were used for the investigations.
The diffusion parameters, solubility, and an acceptor character of scandium and praseodymium impurities in silicon were determined.
__________
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 75–77, January, 2007. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|