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| 高压GaAs微型太阳电池阵列的制备 | |
| 引用本文： | 白一鸣,陈诺夫,王彦硕,王俊,黄添懋,汪宇,张兴旺,尹志刚,张汉,吴金良,姚建曦.高压GaAs微型太阳电池阵列的制备[J].微纳电子技术,2011,48(4):220-224,247. |
| 作者姓名： | 白一鸣 陈诺夫 王彦硕 王俊 黄添懋 汪宇 张兴旺 尹志刚 张汉 吴金良 姚建曦 |
| 作者单位： | 1. 华北电力大学新能源与可再生能源北京市重点实验室,北京,102206 2. 华北电力大学新能源与可再生能源北京市重点实验室,北京,102206;中国科学院半导体研究所材料重点实验室,北京,100083 3. 中国科学院半导体研究所材料重点实验室,北京,100083 4. 中国科学院半导体研究所光电子器件国家工程中心,北京,100083 |
| 基金项目： | 国家自然科学基金，国家重点基础研究发展计划(973计划)资助项目，北京市自然基金，中央高校基本科研业务费专项资金资助项目 |
| 摘 要： | 为了提高GaAs微型太阳电池的输出性能,对微型太阳电池阵列的主要工艺进行了研究和改进。通过对帽层、背电极层和台面的选择性/非选择性湿法腐蚀工艺的探索,实现了对最佳腐蚀液的配比、腐蚀时间和温度的控制。采用侧壁钝化工艺和聚酰亚氨(PI)/SiO2/TiAu/SiO2新型互连结构,不仅确保了电池单元之间有效的隔离和互连,而且极大地降低了侧壁载流子复合电流,同时这种新型互连结构可有效防止由于衬底光敏现象引起的漏电流。经过上述器件工艺改进,获得了高集成度GaAs微型太阳电池阵列。电流-电压(JSC-VOC)测试结果显示,器件的开路电压达到84.2V,填充因子为57%。 |
| 关 键 词： | 微型电源 GaAs太阳电池 漏电流 湿法腐蚀工艺 互连结构 |
Fabrication of High Voltage GaAs Micro-Solar Cell Arrays |
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| Bai Yiming,Chen Nuofu,Wang Yanshuo,Wang Jun,Huang Tianmao,Wang Yu,Zhang Xingwang,Yin Zhigang,Zhang Han,Wu Jinliang,Yao Jianxi.Fabrication of High Voltage GaAs Micro-Solar Cell Arrays[J].Micronanoelectronic Technology,2011,48(4):220-224,247. | |
| Authors: | Bai Yiming Chen Nuofu Wang Yanshuo Wang Jun Huang Tianmao Wang Yu Zhang Xingwang Yin Zhigang Zhang Han Wu Jinliang Yao Jianxi |
| Institution: | 1 (1.New and Renewable Energy of Beijing Key Laboratory,North China Electric Power University,Beijing 102206,China;2.a.Key Laboratory of Semiconductor Materials Science;b.National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) |
| Abstract: | The main fabrication processes were investigated and improved in order to improve the output performance of GaAs micro-solar cells.The selective/unselective etching was carried out for the cap layer,back cathode layer and mesa of the cell,and the control of the optimum et-ching solution ratio,etching time and temperature was obtained by exploring the wet etching process.The sidewall passivation process and the novel interconnected structure of polymide(PI)/SiO2/TiAu/SiO2 were proposed to ensure the effective insulation and interconnection be-tween the cell units,greatly reduce the carriers recombination current of the sidewall and prevent the substrate leakage current due to the photosensitivity of the SI-GaAs substrate.By improving the fabrication technology mentioned above,the GaAs micro-solar cell array with high integration level was fabricated.The result of the current-voltage measurement shows that the open-circuit voltage of 84 V and the fill factor of 57% were achieved. |
| Keywords: | micro power supply GaAs solar cell leakage current wet etching technique interconnected structure |
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