Rashba polarization in HgCdTe inversion layers at large depletion charges |
| |
Authors: | V. F. Radantsev V. V. Kruzhaev G. I. Kulaev |
| |
Affiliation: | Institute of Physics & Applied Mathematics, Ural State University, Ekaterinburg 620083, Russian Federation |
| |
Abstract: | The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range NA–ND=3×1015–3×1018 cm−3. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as PR0.5 and a capability to control the Rashba effect strength at constant electron concentration. |
| |
Keywords: | Landau levels Rashba effect MOS structures Narrow-gap and zero-gap semiconductors Quantum well Magnetocapacitance |
本文献已被 ScienceDirect 等数据库收录! |