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Partially selective semiconductor redox electrodes
Authors:W Habermann  P John  H Matschiner  H Spähn
Institution:(1) Am Gonsenheimer Spieß 8, D-55122 Mainz, Germany;(2) Steinbachstrasse 1, D-36041 Fulda, Germany;(3) Schleiermacherstrasse 8, D-06114 Halle/Saale, Germany;(4) Pariserstrasse 17, D-67069 Ludwigshafen, Germany
Abstract:Redox electrodes made of passivated metals of the subgroups IV to VI of the periodic system with a surface coating of n-conducting metal oxides, generated by oxidizing agents or anodic oxidation, are well suited for measuring the concentration of oxidizing agents. Neither oxygen nor reducing agents affect the measurements. There is a correlation between the mean conductivity of the passive layer and its selectivity. The aged n-conducting passive layers permit reproducible potential settings, and the occurring changes in potential are greater than what is to be expected according to the Nernst equation. The potentiometric measuring of nitrosyl ions and chlorine is used as an example to demonstrate the selectivity of these electrodes.
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