Polarization effects and energy band diagram in AlGaN/GaN heterostructure

We report on a classical approach used to calculate energy band diagrams of AlGaN/GaN heterostructures. We were able to calculate the band diagram and carrier concentrations by this method also when the external bias was applied on the structure. The potential on the Schottky barrier side of the structure is defined more exactly than in a self-consistent solution of Poisson and Schrödinger equations. Dependence of the band profile and the carrier concentration of the two-dimensional gas on the piezoelectric charge can also be calculated by this approach.